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Same model may have multiple batches, images only for reference.
IRFU3706-701PBF Real Image
Same model may have multiple batches, images only for reference.

IRFU3706-701PBF

Part No IRFU3706-701PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 75A IPAK
Datasheet
IRFU3706-701PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 35nC @ 4.5V
Max Input Capacitance 2410pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 88W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047213-IRFU3706-701PBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IRFU3706-701PBF CAD Model

Description

The Infineon Technologies IRFU3706-701PBF is a MOSFET transistor with a N-Channel polarity.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 75A (Tc) @ 25°C
  • Power Dissipation (Max): 88W (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Max Gate Charge: 35nC @ 4.5V
  • Max Input Capacitance: 2410pF @ 10V
  • Package: IPAK (TO-251)
  • Suitable for: Discrete Semiconductor Products
  • Temperature Range - Operating: -55°C to 175°C (TJ)
  • Maximum Rds On: 9 mOhm @ 15A, 10V
  • Supply and Demand Status: Balance
  • Quantity per Package: 75

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