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Same model may have multiple batches, images only for reference.
IRFZ44ESTRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ44ESTRLPBF

Part No IRFZ44ESTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 48A D2PAK
Datasheet
IRFZ44ESTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1360pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 29A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047243-IRFZ44ESTRLPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFZ44ESTRLPBF CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel power MOSFET that is suitable for use in various electronic applications. It features a drain-source breakdown voltage of 60V and a continuous drain current of 48A at 25°C.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 48A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 60nC @ 10V
  • Case/Package: D2PAK case/package that is TO-263-3, D2Pak (2 Leads + Tab), TO-263AB in dimension
  • Maximum Rds On at Id,Vgs: 23 mOhm @ 29A, 10V

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78+ $3.8806 $302.6868
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