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Same model may have multiple batches, images only for reference.
IRFZ44VPBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ44VPBF

Part No IRFZ44VPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 55A TO-220AB
Datasheet
IRFZ44VPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 67nC @ 10V
Max Input Capacitance 1812pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 115W (Tc)
Maximum Rds On at Id,Vgs 16.5 mOhm @ 31A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069624-IRFZ44VPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFZ44V
Introduction Date November 10, 2003
ECCN EAR99
Country of Origin Philippines, Republic of Korea
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IRFZ44VPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-channel power MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 55A @ 25°C.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 55A @ 25°C
  • Maximum Rds On at Id,Vgs: 16.5 mOhm @ 31A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Package: TO-220AB
  • Mounting Technology: through-hole
  • Power Dissipation: 115W (Tc)
  • Status: active
  • Temperature Range: -55°C to 175°C (TJ)

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