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Same model may have multiple batches, images only for reference.
IRFZ48NSTRR Real Image
Same model may have multiple batches, images only for reference.

IRFZ48NSTRR

Part No IRFZ48NSTRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 64A D2PAK
Datasheet
IRFZ48NSTRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 81nC @ 10V
Max Input Capacitance 1970pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 130W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 32A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047264-IRFZ48NSTRR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFZ48NSTRR CAD Model

Description

The Infineon Technologies IRFZ48NSTRR MOSFET is a N-channel polarity, surface-mount device with a drain-source breakdown voltage of 55V and a continuous drain current of 64A at 25°C.

  • Manufacturer: Infineon Technologies
  • Product Name: IRFZ48NSTRR
  • Type: N-Channel MOSFET
  • Mounting Type: Surface-Mount
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 64A @ 25°C
  • Power Dissipation: 3.8W (Ta)
  • Maximum Rds On @ Id,Vgs: 14 mOhm @ 32A, 10V
  • Package: D2PAK
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 1970pF @ 25V

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70+ $1.6701 $116.9070
110+ $1.6179 $177.9690
150+ $1.5657 $234.8550
195+ $1.5135 $295.1325
260+ $1.3569 $352.7940
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