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Same model may have multiple batches, images only for reference.
IRL1004PBF Real Image
Same model may have multiple batches, images only for reference.

IRL1004PBF

Part No IRL1004PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 130A TO-220AB
Datasheet
IRL1004PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 100nC @ 4.5V
Max Input Capacitance 5330pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 78A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 040787-IRL1004PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL1004PBF CAD Model

Description

The Infineon Technologies MOSFET IRL1004PBF is a high-performance through-hole mounting device designed for use in various applications.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 130A (Tc)
  • Power Dissipation: 200W (Tc)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 100nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 6.5 mOhm @ 78A, 10V
  • Turn-On Delay Time: Not Specified
  • Turn-Off Delay Time: Not Specified
  • Maximum Input Capacitance: 5330pF @ 25V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-220AB

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Pricing & Ordering

Quantity Unit Price Ext. Price
27+ $1.8814 $50.7978
57+ $1.7624 $100.4568
89+ $1.7028 $151.5492
127+ $1.5837 $201.1299
165+ $1.5242 $251.4930
205+ $1.4647 $300.2635
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Availability: 3,050 pieces
MOQ: 27 pcs
Order Increment : 1 pcs
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