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IRL1004STRL

Part No IRL1004STRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 130A D2PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 100nC @ 4.5V
Max Input Capacitance 5330pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 78A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047416-IRL1004STRL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL1004STRL CAD Model

Description

The Infineon Technologies 439030 is a high-performance N-channel MOSFET designed for use in various electronic applications.

  • Case/Package: TO-263-3, D2Pak
  • Power Dissipation: 3.8W (Ta), 200W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 130A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 100nC @ 4.5V
  • Maximum Rds On: 6.5 mOhm @ 78A, 10V
  • Lifecycle Status: Obsolete(EOL)
  • Operating Temperature: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.5971 $61.1507
40+ $2.9516 $118.0640
61+ $2.8593 $174.4173
84+ $2.7671 $232.4364
108+ $2.6749 $288.8892
145+ $2.3982 $347.7390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,187 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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