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Same model may have multiple batches, images only for reference.
IRL3714STRR Real Image
Same model may have multiple batches, images only for reference.

IRL3714STRR

Part No IRL3714STRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 36A D2PAK
Datasheet
IRL3714STRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 9.7nC @ 4.5V
Max Input Capacitance 670pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 47W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047473-IRL3714STRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL3714STRR CAD Model

Description

The Infineon Technologies MOSFET is a powerful electronic component designed for high-performance applications.

  • Maximum Power Dissipation: 47W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Channel Type: N-Channel
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 9.7nC @ 4.5V
  • Case/Package: D2PAK

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