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Same model may have multiple batches, images only for reference.
IRL3714ZSTRR Real Image
Same model may have multiple batches, images only for reference.

IRL3714ZSTRR

Part No IRL3714ZSTRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 36A D2PAK
Datasheet
IRL3714ZSTRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 7.2nC @ 4.5V
Max Input Capacitance 550pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047478-IRL3714ZSTRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL3714ZSTRR CAD Model

Description

The Infineon Technologies IRL3714ZSTRR is an N-channel MOSFET designed with a drain-source breakdown voltage of 20V and a continuous drain current of 36A @ 25°C.

  • Maximum Rds On: 16 mOhm @ Id,Vgs of 15A and 10V
  • Power Dissipation: 35W (Tc)
  • Gate-Source Threshold Voltage: 2.55V @ 250μA
  • Maximum Input Capacitance: 550pF @ 10V
  • Package: D2PAK
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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