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NJVMJD42CT4G-VF01

Part No NJVMJD42CT4G-VF01
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 6A DPAK-4
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 6A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 1.5V @ 600mA, 6A
Collector Cut-off Current(Max) 50μA
Typical Gain (hFE) (Min) 15 @ 3A, 4V
Maximum Power Dissipation 1.75W
Frequency - Transition 3MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Win Source Part Number 1077393-NJVMJD42CT4G-VF01
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NJVMJD42CT4G-VF01 CAD Model

Description

The NJVMJD42CT4G-VF01 is a robust bipolar NPN transistor designed and manufactured by ON Semiconductor, a leading name in the semiconductor industry. This high-performance transistor is engineered to deliver efficient power amplification and switching, making it an excellent choice for a wide range of electronic applications.

At the heart of its design, the NJVMJD42CT4G-VF01 features a high current capability and a collector-emitter voltage (VCEO) of 100V, which enables it to handle significant voltage without breakdown. Its collector current rating of up to 6A ensures that it can drive high-power circuits with ease. With a power dissipation of 20W, it can sustain moderate thermal loads, making it suitable for continuous operation in demanding environments.

The device is housed in a compact, surface-mountable package, which allows for efficient use of PCB space without compromising performance. This packaging also provides improved thermal performance and reduced parasitic inductances, leading to more stable operation across its temperature range of -55°C to +150°C.

ON Semiconductor's NJVMJD42CT4G-VF01 is characterized by its fast switching speeds, which is a critical feature for applications requiring quick response times, such as power regulators, DC-DC converters, and motor control circuits. The transistor also exhibits excellent gain characteristics, with a high DC current gain (hFE) that ensures effective signal amplification.

In terms of reliability, the NJVMJD42CT4G-VF01 is designed to meet stringent industry standards. It is equipped with inherent ruggedness, providing protection against overcurrent and thermal overload conditions. Additionally, the device is Pb-free and Halogen-free, making it an environmentally friendly option that complies with current RoHS regulations.

Whether you are designing a power management system, an amplifier, or any high-performance electronic circuit, the NJVMJD42CT4G-VF01 from ON Semiconductor is a transistor that you can rely on for consistent, high-quality performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.2523 $67.5690
65+ $1.8480 $120.1200
100+ $1.7903 $179.0300
135+ $1.7325 $233.8875
175+ $1.6748 $293.0900
235+ $1.5015 $352.8525
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Availability: 7,500 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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