The APT80SM120B is a N-Channel SiCFET (Silicon Carbide) transistor manufactured by Microsemi Corporation.

• GPTDescription: It has a Drain to Source Voltage (Vdss) of 1200V and a maximum Rds On @ Id, Vgs of 55mOhm @ 40A, 20V.
• GPTDescription: The FET is mounted through hole and comes in a TO-247-3 supplier device package.
• GPTDescription: It has a power dissipation (maximum) of 555W (Tc) and can handle a continuous drain current (Id) @ 25°C of 80A (Tc).
• GPTDescription: The Gate Charge (Qg) (Max) @ Vgs is 235nC @ 20V and the maximum Vgs is +25V, -10V. and is now obsolete.
• GPTDescription: The MSL level for the FET is 1 (Unlimited) and it is REACH unaffected.
• GPTDescription: The HTSUS code for the FET is 8541.29.0095.