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IRL3715STRR

Part No IRL3715STRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 54A D2PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1060pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 71W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 115400-IRL3715STRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL3715STRR CAD Model

Description

The Infineon Technologies MOSFET is a powerful N-Channel electronic component with a drain-source breakdown voltage of 20V.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 54A (Tc) @ 25°C
  • Maximum Gate Charge: 17nC @ 4.5V
  • Power Dissipation: 3.8W (Ta) or 71W (Tc)
  • Package: reel - TR
  • Mounting Technology: SMD (SMT)
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6260 $59.4700
225+ $0.5140 $115.6500
350+ $0.4978 $174.2300
480+ $0.4816 $231.1680
625+ $0.4655 $290.9375
830+ $0.4181 $347.0230
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,600 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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