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Same model may have multiple batches, images only for reference.
IRLB3034PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRLB3034PBF

Part No IRLB3034PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 195A TO220AB
Datasheet
IRLB3034PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 162nC @ 4.5V
Max Input Capacitance 10315pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 1.7 mOhm @ 195A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 089540-IRLB3034PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLB3034PBF CAD Model

Description

The Infineon Technologies IRLB3034PBF is a high-performance MOSFET transistor, designed for through-hole mounting.

  • Mounting: through-hole
  • Polarity: N-channel
  • Maximum Power Dissipation: 375W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 195A (Tc) @ 25°C
  • Maximum Rds On at Id,Vgs: 1.7 mOhm @ 195A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 162nC @ 4.5V
  • Supply and Demand Status: balanced

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Quantity Unit Price Ext. Price
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85+ $1.2241 $104.0485
130+ $1.1828 $153.7640
185+ $1.1000 $203.5000
240+ $1.0587 $254.0880
295+ $1.0173 $300.1035
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Availability: 22,400 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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