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Same model may have multiple batches, images only for reference.
IRLL2703PBF Real Image
Same model may have multiple batches, images only for reference.

IRLL2703PBF

Part No IRLL2703PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 3.9A SOT223
Datasheet
IRLL2703PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 14nC @ 5V
Max Input Capacitance 530pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 45 mOhm @ 3.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 069721-IRLL2703PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLL2703PBF CAD Model

Description

The Infineon Technologies 069721-IRLL2703PBF is a N-channel MOSFET transistor designed for use in low power applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 3.9A @ 25°C
  • Package: SOT-223
  • Mounting Type: Surface Mount Technology (SMT)
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Rds On: 45 mOhm @ 3.9A and 10V

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157+ $1.9118 $300.1526
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