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Same model may have multiple batches, images only for reference.
IRLL2705PBF Real Image
Same model may have multiple batches, images only for reference.

IRLL2705PBF

Part No IRLL2705PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 3.8A SOT223
Datasheet
IRLL2705PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 870pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 40 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 140248-IRLL2705PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLL2705PBF CAD Model

Description

The Infineon Technologies IRLL2705PBF is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 3.8A @ 25°C
  • Package: SOT-223
  • Mounting Type: Surface Mount Technology
  • Maximum Power Dissipation: 1W
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2120 $50.8760
49+ $2.0720 $101.5280
75+ $2.0020 $150.1500
108+ $1.8620 $201.0960
140+ $1.7920 $250.8800
175+ $1.7220 $301.3500
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Availability: 30,660 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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