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IRLML2402TRPBF Infineon Technologies IRLML2402TRPBF real image389 IRLML2402TRPBF Real Image1 IRLML2402TRPBF Real Image2 IRLML2402TRPBF Real Image3 IRLML2402TRPBF Real Image4 IRLML2402TRPBF Real Image5
Same model may have multiple batches, images only for reference.
IRLML2402TRPBF Infineon Technologies IRLML2402TRPBF real image389 IRLML2402TRPBF Real Image1 IRLML2402TRPBF Real Image2 IRLML2402TRPBF Real Image3 IRLML2402TRPBF Real Image4 IRLML2402TRPBF Real Image5
IRLML2402TRPBF Infineon Technologies IRLML2402TRPBF real image389 IRLML2402TRPBF Real Image1 IRLML2402TRPBF Real Image2 IRLML2402TRPBF Real Image3 IRLML2402TRPBF Real Image4 IRLML2402TRPBF Real Image5
Same model may have multiple batches, images only for reference.

IRLML2402TRPBF

Part No IRLML2402TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 1.2A SOT-23
Datasheet
IRLML2402TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 3.9nC @ 4.5V
Max Input Capacitance 110pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 540mW (Ta)
Maximum Rds On at Id,Vgs 250 mOhm @ 930mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro3/SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 017765-IRLML2402TRPBF
Family Name IRLML2402
Introduction Date December 19, 2003
ECCN EAR99
Country of Origin China, Philippines, Thailand
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLML2402TRPBF CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel power transistor that is suitable for use in a variety of applications, including power supplies, motor control, and lighting.

  • Maximum Power Dissipation: 540mW (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 1.2A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Gate Charge: 3.9nC @ 4.5V
  • Maximum Rds On: 250 mOhm @ 930mA, 4.5V
  • Package: Micro3/SOT-23
  • Mounting Type: Surface-Mounting
  • Temperature Range: -55°C to 150°C (TJ)
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3564 $51.6780
300+ $0.3339 $100.1700
465+ $0.3226 $150.0090
670+ $0.3000 $201.0000
870+ $0.2888 $251.2560
1,085+ $0.2775 $301.0875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 197,900 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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