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Same model may have multiple batches, images only for reference.
IRLR2705TRRPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRLR2705TRRPBF

Part No IRLR2705TRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 28A DPAK
Datasheet
IRLR2705TRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 25nC @ 5V
Max Input Capacitance 880pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047591-IRLR2705TRRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLR2705TRRPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel power transistor with a drain-source breakdown voltage of 55V. Infineon Technologies

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 28A @ 25°C
  • Power Dissipation: 68W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Mounting: SMD (SMT) D-Pak
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Rds On (Max): 40 mOhm @ 17A, 10V
  • Gate-Source Voltage (Max): ±16V
  • Gate Charge (Max): 25nC @ 5V
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)

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145+ $0.3542 $51.3590
305+ $0.3314 $101.0770
470+ $0.3200 $150.4000
675+ $0.2971 $200.5425
880+ $0.2857 $251.4160
1,095+ $0.2743 $300.3585
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