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Same model may have multiple batches, images only for reference.
IRLR3103TRR Real Image
Same model may have multiple batches, images only for reference.

IRLR3103TRR

Part No IRLR3103TRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 30V 55A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 30V 55A DPAK
Datasheet
IRLR3103TRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 50nC @ 4.5V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 107W (Tc)
Maximum Rds On at Id,Vgs 19 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 127016-IRLR3103TRR
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRLR3103
Introduction Date August 08, 1996
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRLR3103TRR CAD Model

Description

Infineon Technologies presents the IRLR3103TRR MOSFET, an N-channel device that is suitable for use in a range of electronic applications.

  • Maximum Power Dissipation: 107W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 55A (Tc) @ 25°C
  • Maximum Rds On: 19 mOhm @ 33A and 10V
  • Package: D-Pak case
  • Mounting Technology: SMD (SMT) technology
  • Maximum Gate Charge: 50nC @ 4.5V
  • Maximum Input Capacitance: 1600pF @ 25V

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