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Same model may have multiple batches, images only for reference.
IRLR3410TRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRLR3410TRLPBF

Part No IRLR3410TRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 17A DPAK
Datasheet
IRLR3410TRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 34nC @ 5V
Max Input Capacitance 800pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 105 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017798-IRLR3410TRLPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLR3410TRLPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel polarity electronic component with a D-Pak case/package and a dimension of TO-252-3, DPak (2 Leads + Tab), SC-63.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 17A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 34nC @ 5V
  • Maximum Rds On at Id,Vgs: 105 mOhm @ 10A, 10V
  • Power Dissipation: 79W (Tc)
  • Discrete Semiconductor Products Use: yes

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Quantity Unit Price Ext. Price
195+ $0.2614 $50.9730
410+ $0.2449 $100.4090
635+ $0.2366 $150.2410
910+ $0.2200 $200.2000
1,185+ $0.2118 $250.9830
1,475+ $0.2035 $300.1625
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