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Same model may have multiple batches, images only for reference.
IRLR7807ZTRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRLR7807ZTRRPBF

Part No IRLR7807ZTRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 43A DPAK
Datasheet
IRLR7807ZTRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 780pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 13.8 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047625-IRLR7807ZTRRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLR7807ZTRRPBF CAD Model

Description

The Infineon Technologies MOSFET is an N-Channel power transistor designed for use in applications that require high power dissipation of up to 40W (Tc) and a drive voltage of up to 10V.

  • Channel Type: N-Channel
  • Maximum Power Dissipation: 40W (Tc)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 43A @ 25°C
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Maximum Gate Charge: 11nC @ 4.5V
  • Maximum Input Capacitance: 780pF @ 15V
  • Package: D-Pak
  • Mounting: SMD (SMT) technology
  • Status: Obsolete
  • Popularity: Medium

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