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Same model may have multiple batches, images only for reference.
IRLR7821PBF Real Image
Same model may have multiple batches, images only for reference.

IRLR7821PBF

Part No IRLR7821PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 65A DPAK
Datasheet
IRLR7821PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1030pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 115931-IRLR7821PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLR7821PBF CAD Model

Description

The Infineon Technologies IRLR7821PBF is an N-Channel MOSFET transistor designed for use in power management applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 65A @ Tc
  • Maximum Power Dissipation: 75W @ Tc
  • Package: D-Pak case
  • Maximum Rds On: 10 mOhm @ 15A, 10V
  • Status: Not for new designs
  • Popularity: 46% in the open market
  • Packaging: Tube/rail
  • Mounting: SMD (SMT)

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