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Same model may have multiple batches, images only for reference.
IRLR8103VTRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRLR8103VTRLPBF

Part No IRLR8103VTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 91A DPAK
Datasheet
IRLR8103VTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 91A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 27nC @ 5V
Max Input Capacitance 2672pF @ 16V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 115W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047637-IRLR8103VTRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLR8103VTRLPBF CAD Model

Description

The IRLR8103VTRLPBF is an N-Channel MOSFET from Infineon Technologies, suitable for use in various applications, particularly in discrete semiconductor products.

  • Maximum Power Dissipation: 115W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 91A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 27nC @ 5V
  • Maximum Input Capacitance: 2672pF @ 16V
  • Maximum Rds On: 9 mOhm @ 15A and 10V
  • Packaging: D-Pak
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Product Status: Obsolete (EOL)
  • Popularity: popular
  • Supply and Demand Balance: medium

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