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Same model may have multiple batches, images only for reference.
IRLS4030TRL7PP Real Image
Same model may have multiple batches, images only for reference.

IRLS4030TRL7PP

Part No IRLS4030TRL7PP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 190A D2PAK-7
Datasheet
IRLS4030TRL7PP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 140nC @ 4.5V
Max Input Capacitance 11490pF @ 50V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 370W (Tc)
Maximum Rds On at Id,Vgs 3.9 mOhm @ 110A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (7-Lead)
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 069765-IRLS4030TRL7PP
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLS4030TRL7PP CAD Model

Description

The Infineon Technologies IRLS4030TRL7PP is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 190A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 140nC @ 4.5V
  • Maximum Input Capacitance: 11490pF @ 50V
  • Maximum Rds On: 3.9 mOhm @ 110A, 10V
  • Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
  • Mounting: SMD (SMT) technology
  • Maximum Power Dissipation: 370W (Tc)
  • Drive Voltage: 4.5V, 10V

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