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Same model may have multiple batches, images only for reference.
IRLU3717PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRLU3717PBF

Part No IRLU3717PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 120A I-PAK
Datasheet
IRLU3717PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.45V @ 250μA
Max Gate Charge 31nC @ 4.5V
Max Input Capacitance 2830pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 89W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 069769-IRLU3717PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLU3717PBF CAD Model

Description

The Infineon Technologies IRLU3717PBF is a N-channel MOSFET with a maximum power dissipation of 89W (Tc) and a drain-source breakdown voltage of 20V.

  • Continuous Drain Current: 120A (Tc)
  • Maximum Gate Charge: 31nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 4 mOhm @ 15A, 10V
  • Package: I-Pak
  • Mounting Type: Through Hole
  • For Use In: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand: Balanced

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