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Same model may have multiple batches, images only for reference.
FQP70N10 Real Image
Same model may have multiple batches, images only for reference.

FQP70N10

Part No FQP70N10
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 57A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 3300pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 28.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 067444-FQP70N10
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP70N10 CAD Model

Description

The FQP70N10 is an N-Channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Maximum Power Dissipation: 160W (Tc)
  • Drive Voltage: 10V
  • Mounting Type: Through-Hole
  • Operating Temperature: -55°C to 175°C (TJ)
  • Package: TO-220-3
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 57A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 110nC @ 10V
  • Maximum Input Capacitance: 3300pF @ 25V
  • Maximum Gate-Source Voltage: ±25V
  • Maximum Rds On: 23 mOhm @ 28.5A, 10V

The FQP70N10 is an active product with medium popularity and limited supply and demand status.

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38+ $2.6853 $102.0414
58+ $2.6014 $150.8812
80+ $2.5175 $201.4000
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138+ $2.1818 $301.0884
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Availability: 1,750 pieces
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