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BSZ165N04NS G

Part No BSZ165N04NS G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 31A TSDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 8.9A (Ta), 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 10μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 840pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 16.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 128265-BSZ165N04NS G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSZ165N04NS G CAD Model

Description

BSZ165N04NS G Power MOSFET

The BSZ165N04NS G is a reliable power MOSFET designed to meet the demands of modern electronic systems, focusing on high efficiency and compact design.

  • Applications:
    • Power management in computing
    • Electronic playbooks
    • Power tools
    • Industrial automation systems
  • Features and Benefits:
    • High current capacity
    • Low parasitic losses
    • Efficient thermal management
    • Compatible with lead-free and RoHS standards
  • Additional Details:
    • Vds: 40V
    • Id: 80A
    • Package: SuperSO8

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0949 $60.2195
130+ $0.8984 $116.7920
200+ $0.8703 $174.0600
275+ $0.8422 $231.6050
355+ $0.8142 $289.0410
475+ $0.7300 $346.7500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 34,497 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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