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Same model may have multiple batches, images only for reference.
IRLZ34NLPBF Real Image
Same model may have multiple batches, images only for reference.

IRLZ34NLPBF

Part No IRLZ34NLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 30A TO-262
Datasheet
IRLZ34NLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 25nC @ 5V
Max Input Capacitance 880pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 68W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 205500-IRLZ34NLPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLZ34NLPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel polarity electronic component with a TO-262 case/package and a dimension of TO-262-3 Long Leads, I2Pak, TO-262AA.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 30A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 25nC @ 5V
  • Maximum Rds On at Id,Vgs: 35 mOhm @ 16A, 10V
  • Power Dissipation: 3.8W (Ta), 68W (Tc)
  • Usage: Discrete Semiconductor Products

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