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Same model may have multiple batches, images only for reference.
JANSF2N7262
Same model may have multiple batches, images only for reference.

JANSF2N7262

Part No JANSF2N7262
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 3.5 A
Drain to Source Breakdown Voltage 200 V
Gate to Source Voltage (Vgs) 20 V
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
Power Dissipation 25 W
Radiation Hardening Yes
RoHS Compliant
Win Source Part Number 1232292-JANSF2N7262
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANSF2N7262 CAD Model

Description

The JANSF2N7262 is an RF MOSFET transistor designed for various applications.

  • Power Dissipation: 25W
  • Operating Temperature: -55°C to 150°C
  • Continuous Drain Current: 3.5A
  • Drain to Source Breakdown Voltage: 200V
  • Mount: Through-Hole
  • RoHS: Compliant
  • Radiation Hardened: Yes
  • Popularity: Medium

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