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Same model may have multiple batches, images only for reference.
SPB03N60C3 Real Image
Same model may have multiple batches, images only for reference.

SPB03N60C3

Part No SPB03N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 3.9V @ 135µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 25 V
Power Dissipation (Max) 38W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 630 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 675101-SPB03N60C3
Ultra Librarian 3D Model Ultra Librarian SPB03N60C3 CAD Model

Description

The SPB03N60C3 is a N-channel MOSFET transistor from Infineon Technologies' CoolMOS™ series.

  • Application: discrete semiconductor applications that require high voltage and current handling capabilities
  • Drain-to-Source Voltage: 600V
  • Continuous Drain Current: 3.2A @ 25°C
  • Rds On: 1.4Ohm @ 2A and 10V
  • Gate Voltage: up to ±20V
  • Gate Charge: 17nC @ 10V
  • Mounting Type: surface mount
  • Packaging: bulk
  • Standard Package: 630 pieces

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Availability: 20,000 pieces
MOQ: 60 pcs
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