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SPB20N60C2

Part No SPB20N60C2
Manufacturer Infineon Technologies
Catalog Electronic Wholesale
Description Cool MOS™ Power Transistor
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1257798-SPB20N60C2
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB20N60C2 CAD Model

Description

The SPB20N60C2 is a CoolMOS™ power MOSFET from Infineon Technologies. It's a high-voltage N-channel MOSFET designed for use in switched-mode power supplies (SMPS), power factor correction (PFC), and other high-voltage switching applications. This MOSFET utilizes Infineon's advanced CoolMOS™ technology to provide low on-resistance, fast switching speeds, and high avalanche ruggedness.

Applications:

  • Switched-Mode Power Supplies (SMPS): Used in power supplies for computers, servers, and consumer electronics.
  • Power Factor Correction (PFC): Employed in PFC circuits to improve the power factor of electronic devices.
  • Lighting Ballasts: Found in electronic lighting ballasts for fluorescent and LED lighting.
  • Industrial Power Supplies: Used in power supplies for industrial equipment and machinery.
  • Solar Inverters: Employed in solar inverters to convert DC power from solar panels to AC power.

Features:

  • N-Channel MOSFET: An N-channel enhancement mode MOSFET.
  • CoolMOS™ Technology: Utilizes Infineon's CoolMOS™ technology for low on-resistance and fast switching.
  • High Voltage: Designed for high-voltage applications, typically 600V.
  • Low On-Resistance: Features low drain-source on-resistance (RDS(on)) for reduced conduction losses.
  • Fast Switching Speed: Offers fast switching speeds, reducing switching losses and improving efficiency.
  • Avalanche Ruggedness: Provides high avalanche ruggedness for enhanced reliability.
  • TO-263 Package: Typically available in a TO-263 (D2PAK) package for surface mounting.

Benefits:

  • High Efficiency: CoolMOS™ technology, fast switching speeds, and low RDS(on) minimize power losses, resulting in high efficiency.
  • Improved Reliability: High avalanche ruggedness enhances the robustness and reliability of the MOSFET in demanding applications.
  • Simplified Design: Easy to use in various circuit configurations due to its standard package and characteristics.
  • Reduced Heat Generation: Low RDS(on) reduces heat generation, allowing for smaller heat sinks and more compact designs.
  • Cost-Effective Solution: Provides a cost-effective solution for high-voltage power switching applications.

Additional Details:

The SPB20N60C2 is typically available in a surface-mount TO-263 package. Key specifications include a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of ±20V, and a continuous drain current (ID) that depends on the specific package and thermal conditions. Datasheets should be consulted for precise electrical characteristics and thermal resistance values. It is RoHS compliant.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.6313 $66.3130
24+ $5.4412 $130.5888
37+ $5.2711 $195.0307
51+ $5.1012 $260.1612
66+ $4.9309 $325.4394
88+ $4.4210 $389.0480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,010 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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