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Same model may have multiple batches, images only for reference.
SPB80N06S2-H5 Real Image
Same model may have multiple batches, images only for reference.

SPB80N06S2-H5

Part No SPB80N06S2-H5
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A D2PAK
Datasheet
SPB80N06S2-H5 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 230μA
Max Gate Charge 155nC @ 10V
Max Input Capacitance 5500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 212018-SPB80N06S2-H5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPB80N06S2-H5 CAD Model

Description

The Infineon Technologies SPB80N06S2-H5 MOSFET is an SMD (SMT) mounting technology product that is categorized under discrete semiconductor products.

  • Product Status: obsolete (EOL)
  • Popularity Rating: Medium
  • Supply and Demand Status: Limited
  • Win Source Part Number: 212018-SPB80N06S2-H5
  • Maximum Gate Charge: 155nC @ 10V
  • Maximum Input Capacitance: 5500pF @ 25V
  • Maximum Rds On: 5.5 mOhm @ 80A, 10V

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