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SPD04N60C3BTMA1

Part No SPD04N60C3BTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 4.5A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 200μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 490pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 950 mOhm @ 2.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 112039-SPD04N60C3BTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPD04N60C3BTMA1 CAD Model

Description

Infineon Technologies presents a high-performance MOSFET, the SPD04N60C3BTMA1.

  • Polarity: N-channel
  • Maximum Power Dissipation: 50W (Tc)
  • Package: PG-TO252-3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 4.5A (Tc) @ 25°C
  • Maximum Rds On at Id, Vgs: 950 mOhm @ 2.8A, 10V
  • Gate-Source Threshold Voltage: 3.9V @ 200μA
  • Maximum Voltage: ±20V
  • Maximum Input Capacitance: 490pF @ 25V
  • Maximum Gate Charge: 25nC @ 10V
  • Category: discrete semiconductor products
  • Popularity: medium
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1071 $55.3550
100+ $1.0357 $103.5700
150+ $1.0000 $150.0000
220+ $0.9286 $204.2920
280+ $0.8929 $250.0120
350+ $0.8572 $300.0200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 54,870 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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