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SPD15P10PGBTMA1

Part No SPD15P10PGBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 15A TO252-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.1V @ 1.54mA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 1280pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 128W (Tc)
Maximum Rds On at Id,Vgs 240 mOhm @ 10.6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1101546-SPD15P10PGBTMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPD15P10PGBTMA1 CAD Model

Description

The SPD15P10PGBTMA1 from Infineon Technologies is a P-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 15A at 25 degrees Celsius.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 15A @ 25 degrees Celsius
  • Maximum Rds on at Id, Vgs: 240 mOhm @ 10.6A, 10V
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Power Dissipation: 128W (Tc)
  • Operating Temperature Range: -55 to 175 degrees Celsius
  • Package: PG-TO252-3
  • Dimension: DPak (2 Leads + Tab), SC-63
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1470 $51.6150
110+ $0.9412 $103.5320
165+ $0.9118 $150.4470
230+ $0.8824 $202.9520
295+ $0.8529 $251.6055
395+ $0.7647 $302.0565
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,550 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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