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Same model may have multiple batches, images only for reference.
SPD50N03S2-07 G Real Image
Same model may have multiple batches, images only for reference.

SPD50N03S2-07 G

Part No SPD50N03S2-07 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs 46.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2170 pF @ 25 V
Power Dissipation (Max) 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 408 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 338441-SPD50N03S2-07 G
Ultra Librarian 3D Model Ultra Librarian SPD50N03S2-07 G CAD Model

Description

The SPD50N03S2-07 G is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: OptiMOS
  • Applications: discrete semiconductor applications
  • Package: bulk
  • Standard Package Quantity: 408 pcs
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 50A
  • Maximum on-resistance (Rds On): 7.3mOhm @ 50A and 10V
  • Gate-source threshold voltage (Vgs(th)): 4V @ 85µA
  • Power Dissipation: 136W
  • Temperature Range: -55°C to 175°C
  • Mounting: Surface mount device
  • Package: TO-252-3, DPak
  • Status: active product
  • ECCN: EAR99

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