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Same model may have multiple batches, images only for reference.
SPI47N10L Real Image
Same model may have multiple batches, images only for reference.

SPI47N10L

Part No SPI47N10L
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description SIPMOS Power-Transistor
Datasheet
SPI47N10L Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series SIPMOS
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 2mA
Gate Charge (Qg) (Maximum) @ Vgs 135nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2500pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 175W (Tc)
Rds On (Maximum) @ Id, Vgs 26 mOhm @ 33A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO262-3-1
Package TO-262-3 Long Leads, I2Pak, TO-262AA
RoHS State Request Verification
Win Source Part Number 1257924-SPI47N10L
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Family Name SPI47N10L
Introduction Date August 23, 2001
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian SPI47N10L CAD Model

Description

The Infineon Technologies SPI47N10L is a SIPMOS MOSFET transistor that is designed for use in discrete semiconductor products.

  • Continuous Drain Current: 47A (Tc) @ 25°C
  • Maximum Drain-Source Voltage: 100V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Power Dissipation: 175W (Tc)
  • Maximum On-Resistance: 26 mOhm @ 33A and 10V
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Mounting: Through-hole
  • Introduction Date: August 23, 2001
  • Status: Obsolete

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