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Same model may have multiple batches, images only for reference.
SPN01N60C3 Real Image
Same model may have multiple batches, images only for reference.

SPN01N60C3

Part No SPN01N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 0.3A SOT-223
Datasheet
SPN01N60C3 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 250μA
Max Gate Charge 5nC @ 10V
Max Input Capacitance 100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 6 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 065945-SPN01N60C3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPN01N60C3 CAD Model

Description

The Infineon Technologies SPN01N60C3 is an N-channel MOSFET that is now obsolete.

  • Maximum Power Dissipation: 1.8W (Ta)
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 300mA (Ta)

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Quantity Unit Price Ext. Price
105+ $0.5758 $60.4590
245+ $0.4725 $115.7625
380+ $0.4578 $173.9640
525+ $0.4430 $232.5750
675+ $0.4282 $289.0350
905+ $0.3839 $347.4295
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Availability: 114,000 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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