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SPN02N60S5

Part No SPN02N60S5
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 0.4A SOT-223
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 80μA
Max Gate Charge 7.4nC @ 10V
Max Input Capacitance 250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 3 Ohm @ 1.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 1101610-SPN02N60S5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPN02N60S5 CAD Model

Description

The Infineon Technologies SPN02N60S5 MOSFET is a high-performance N-channel polarity device that is designed for use in a wide range of applications.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 400mA
  • Package: PG-SOT223-4
  • Gate-Source Voltage: ±20V (max)
  • Rds On @ Id,Vgs: 3 Ohm @ 1.1A, 10V (max)
  • Lifecycle Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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