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SPP07N60S5HKSA1

Part No SPP07N60S5HKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description LOW POWER_LEGACY / N-Channel 600 V 7.3A (Tc) 83W (Tc) Through Hole PG-TO220-3-1
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 970 pF @ 25 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number SPP07N
Standard Package 500 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 414604-SPP07N60S5HKSA1
Ultra Librarian 3D Model Ultra Librarian SPP07N60S5HKSA1 CAD Model

Description

The SPP07N60S5HKSA1 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™
  • Drain to Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 7.3A
  • Rds On (Max): 600mOhm @ Id of 4.6A and Vgs of 10V
  • Package: TO-220-3
  • Mounting Type: Through-Hole
  • Gate Charge (Qg): 35nC @ Vgs of 10V
  • Input Capacitance (Ciss): 970pF @ Vds of 25V
  • Operating Temperature Range: -55°C to 150°C
  • Status: Obsolete

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