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Same model may have multiple batches, images only for reference.
SPP20N60C3XKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPP20N60C3XKSA1

Part No SPP20N60C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 20.7A TO-220
Datasheet
SPP20N60C3XKSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 1mA
Max Gate Charge 114nC @ 10V
Max Input Capacitance 2400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 13.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 192421-SPP20N60C3XKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPP20N60C3XKSA1 CAD Model

Description

The Infineon Technologies 192421-SPP20N60C3XKSA1 is a N-Channel MOSFET that is designed for use in discrete semiconductor products.

  • Package: PG-TO220-3-1
  • Drain-Source Breakdown Voltage: 600V
  • Maximum Continuous Drain Current @ 25°C: 20.7A (Tc)
  • Maximum Rds On @ Id, Vgs: 190 mOhm @ 13.1A, 10V
  • Gate-Source Threshold Voltage: 3.9V @ 1mA
  • Maximum Gate Charge: 114nC @ 10V
  • Maximum Input Capacitance: 2400pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Power Dissipation: 208W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)

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Quantity Unit Price Ext. Price
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95+ $1.0833 $102.9135
145+ $1.0494 $152.1630
200+ $1.0156 $203.1200
255+ $0.9817 $250.3335
345+ $0.8802 $303.6690
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