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Same model may have multiple batches, images only for reference.
SPP20N60S5 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPP20N60S5

Part No SPP20N60S5
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 20A TO220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number SPP20N
Standard Package 500 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 339051-SPP20N60S5
Ultra Librarian 3D Model Ultra Librarian SPP20N60S5 CAD Model

Description

The SPP20N60S5 is a CoolMOS™ power MOSFET designed for various applications. It is an N-channel MOSFET with a drain-source voltage of 650V and a continuous drain current of 20A @ 25°C. The SPP20N60S5 is a CoolMOS™ power MOSFET designed for various applications.

  • Drain-Source Voltage: 650V
  • Continuous Drain Current: 20A @ 25°C
  • On-Resistance: 190mOhm @ 13A and 10V gate-source voltage
  • Power Dissipation: 208W
  • Package Type: Through-hole (TO-220-3)
  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • Temperature Range: -55°C to 150°C

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