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Same model may have multiple batches, images only for reference.
SPU03N60C3 Real Image
Same model may have multiple batches, images only for reference.

SPU03N60C3

Part No SPU03N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 3.2A TO-251
Datasheet
SPU03N60C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 135μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 065977-SPU03N60C3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPU03N60C3 CAD Model

Description

The Infineon Technologies SPU03N60C3 is an N-channel MOSFET used in discrete semiconductor products.

  • Maximum Power Dissipation: 38W (Tc)
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 3.2A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3.9V @ 135μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 1.4 Ohm @ 2A, 10V
  • Package: PG-TO251-3
  • Mounting: Through hole technology
  • Device Status: Active
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and demand status: Balance

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