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SPW11N60C3FKSA1

Part No SPW11N60C3FKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-1
Package / Case TO-247-3
Base Product Number SPW11N
Other Names 2156-SPW11N60C3FKSA1-IT,INFINFSPW11N60C3FKSA1,SPW11N60C3,SPW11N60C3X,SPW11N60C3,SPW11N60C3XK,SP000013728,SPW11N60C3IN,SPW11N60C3IN
Standard Package 240
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278334-SPW11N60C3FKSA1
Ultra Librarian 3D Model Ultra Librarian SPW11N60C3FKSA1 CAD Model

Description

The Infineon Technologies CoolMOS™ 1278334-SPW11N60C3FKSA1 is an N-Channel MOSFET transistor designed for use in discrete semiconductor products such as transistors and FETs.

  • Drain to Source Voltage: 650 V
  • Continuous Drain Current: 11A (Tc)
  • Rds On (Max): 380mOhm @ 7A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
  • Temperature Range: -55°C to 150°C (TJ)
  • Status: Obsolete

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