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Same model may have multiple batches, images only for reference.
SPW11N60CFD Real Image
Same model may have multiple batches, images only for reference.

SPW11N60CFD

Part No SPW11N60CFD
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 11A TO-247
Datasheet
SPW11N60CFD Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 500μA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 440 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 212044-SPW11N60CFD
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPW11N60CFD CAD Model

Description

The Infineon Technologies SPW11N60CFD MOSFET is a high-performance N-channel power MOSFET.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current @ 25°C: 11A
  • Power Dissipation: 125W
  • Gate-Source Threshold Voltage: 5V @ 500μA
  • Maximum Gate Charge: 64nC @ 10V
  • Maximum Input Capacitance: 1200pF @ 25V
  • Maximum Rds On @ Id,Vgs: 440 mOhm @ 7A, 10V
  • Package: PG-TO247-3
  • Dimensions: TO-247-3

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