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Same model may have multiple batches, images only for reference.
SPW11N80C3 Real Image
Same model may have multiple batches, images only for reference.

SPW11N80C3

Part No SPW11N80C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 11A TO-247
Datasheet
SPW11N80C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 680μA
Max Gate Charge 85nC @ 10V
Max Input Capacitance 1600pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 156W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 7.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 088344-SPW11N80C3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPW11N80C3 CAD Model

Description

The Infineon Technologies SPW11N80C3 is an N-Channel MOSFET with a drain-source breakdown voltage of 800V and a continuous drain current of 11A @ 25°C.

  • Power Dissipation: 156W (Tc)
  • Maximum Gate Charge: 85nC @ 10V
  • Maximum Input Capacitance: 1600pF @ 100V
  • Mounting: Through hole
  • Package: PG-TO247-3
  • Supply and Demand: Balanced

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180+ $1.9253 $346.5540
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Availability: 2,400 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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