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FDC5614P-G

Part No FDC5614P-G
Manufacturer Innovisionsemi
Catalog Transistors – FETs, MOSFETs – Single
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 759 pF @ 30 V
Power Dissipation (Max) 800mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6
Ultra Librarian 3D Model Ultra Librarian FDC5614P-G CAD Model

Description

MOSFET N-CH 60V SUPERSOT6

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Shipping Information

Shipped from HK warehouse
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