The TN28F010-200 is a 1 Mbit (128K x 8) Flash Memory device manufactured by Intel. This memory is a non-volatile storage solution commonly used in embedded systems and various electronic devices to store firmware, configuration data, and other critical information.

Applications:

• Embedded Systems
• Firmware Storage
• Data Logging
• Industrial Control Systems
• Consumer Electronics

Features:

• Organization: 128K x 8 bits.
• Access Time: 200 ns, indicating the time it takes to access data.
• Supply Voltage: Typically operates at 5V.
• Non-Volatile: Retains data even when power is removed.
• Program/Erase Cycles: Endurance is specified, meaning the memory can be programmed and erased a certain number of times.
• Package Type: DIP or PLCC.

Benefits:

• Non-Volatility: Ensures data retention without power, crucial for critical system information.
• Fast Access Time: 200 ns access time enables quick data retrieval.
• Compatibility: 5V operating voltage makes it compatible with many legacy systems.
• Reliability: Designed for reliable data storage in harsh environments.

The TN28F010-200 Flash Memory is a reliable and widely used non-volatile storage solution. Its 200 ns access time, combined with its non-volatile nature, makes it suitable for a variety of embedded applications. This memory device ensures that critical data is retained even in the event of a power loss, making it an essential component in systems that require data integrity.

It is commonly used for storing firmware in embedded systems, data logging in industrial applications, and configuration data in various electronic devices. Its compatibility with 5V systems makes it a suitable choice for both new designs and legacy system upgrades. The endurance specification indicates the number of program/erase cycles the memory can withstand, ensuring a long operational life.

The availability of different package types like DIP and PLCC provides flexibility in PCB design and assembly. Overall, the TN28F010-200 provides a robust and efficient solution for non-volatile memory storage needs.