The IR21367S is a high-voltage, high-speed power MOSFET and IGBT driver with three independent high-side and low-side referenced output channels. Designed for applications demanding efficient power device control, this driver incorporates proprietary HVIC and latch-immune CMOS technologies for a robust and reliable monolithic construction. This specific variant is designed for surface mount applications.
Applications:
- 3-Phase motor drives
- Power inverters
- Uninterruptible Power Supplies (UPS)
- Advanced lighting systems
- Industrial automation equipment
Features:
- Floating channel designed for bootstrap operation, enabling high-side driving.
- Tolerant to negative transient voltage, providing enhanced robustness.
- Gate drive supply range from 10V to 20V, offering flexibility in design.
- Undervoltage lockout for all channels, preventing damage during low voltage conditions.
- Cross-conduction prevention logic, improving efficiency and reliability.
- Matched propagation delay for all channels, ensuring accurate timing and control.
- 3.3V logic compatible input, allowing easy integration with microcontrollers and DSPs.
Benefits:
- Simplified gate drive circuitry, reducing component count and board space.
- Improved system reliability due to undervoltage lockout and cross-conduction prevention.
- Enhanced efficiency and performance through optimized switching characteristics.
- Robust operation in noisy electrical environments.
- Easy interfacing with control logic.
Additional Details:
The IR21367S features a typical propagation delay of 150ns, allowing for precise control of switching events. It is capable of driving both high-side and low-side N-channel MOSFETs or IGBTs. The integrated undervoltage lockout (UVLO) function protects the power devices during startup or when supply voltage is insufficient. Its high noise immunity ensures reliable operation in industrial environments. The device is typically rated for an operating temperature range of -40°C to +125°C. The surface mount package enables automated assembly and reduces overall system size. This driver is commonly used in designs requiring high power density and reliability.