The IRF7626TRPBF is a HEXFET® power MOSFET from International Rectifier (now Infineon Technologies), optimized for high-efficiency power conversion in space-constrained applications. This device is characterized by its low on-state resistance (Rds(on)) and gate charge (Qg), minimizing both conduction and switching losses. It is available in a small TSSOP-8 package offering good thermal performance.

Applications:

• Synchronous rectification in DC-DC converters
• Load switching
• Power management in portable devices (smartphones, tablets)
• Battery charging circuits
• Power supplies for small electronics

Features:

• Low on-resistance (Rds(on))
• Low gate charge (Qg)
• TSSOP-8 package for compact size
• Logic-level gate drive
• Pb-free and RoHS compliant

Benefits:

• Reduces conduction losses, leading to higher efficiency
• Enables faster switching speeds, minimizing switching losses
• Suitable for high-density and portable designs
• Simplifies gate drive requirements
• Environmentally friendly

Technical Specifications:

The IRF7626TRPBF features a drain-source voltage (Vds) rating of 30V. The on-resistance (Rds(on)) is very low, contributing to efficiency. The gate charge (Qg) is minimized for faster switching. It's housed in a TSSOP-8 package. Refer to the Infineon Technologies datasheet for comprehensive electrical, thermal, and package specifications.