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Same model may have multiple batches, images only for reference.
IRFP260 Real Image
Same model may have multiple batches, images only for reference.

IRFP260

Part No IRFP260
Manufacturer IXYS
Catalog FETs - Single
Description Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A) | MOSFET N-CH 200V 46A TO247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 46A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 55mOhm at 28A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 230nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3900pF at 25V
Power Dissipation (Maximum) 280W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247AD
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1187775-IRFP260
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Industrial, Portable Devices, Consumer Electronics
Ultra Librarian 3D Model Ultra Librarian IRFP260 CAD Model

Description

Looking for a reliable and high-performance MOSFET? The IXYS IRFP260 is a N-Channel MOSFET designed for use in power management, industrial, portable devices, and consumer electronics.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 46A
  • On-State Resistance: 55mOhm @ 28A and 10V
  • Gate-Source Voltage: ±20V
  • Operating Temperature: -55°C to 150°C
  • Power Dissipation: 280W
  • Package: TO-247AD
  • Pack Quantity: 30
  • Alternative Parts: STW38NB20, FQA48N20_NL, and IRFP260SN

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