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Same model may have multiple batches, images only for reference.
IXFA5N100P Real Image
Same model may have multiple batches, images only for reference.

IXFA5N100P

Part No IXFA5N100P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 5A TO263
Datasheet
IXFA5N100P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series HiPerFET™, Polar
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.8Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.4 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1830 pF @ 25 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA (IXFA)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IXFA5N100
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 876064-IXFA5N100P
Ultra Librarian 3D Model Ultra Librarian IXFA5N100P CAD Model

Description

The 876064-IXFA5N100P is a high-performance N-channel MOSFET transistor from the HiPerFET™ series, also known as Polar.

  • Package: Tube
  • Mounting: Surface mountable
  • Drain-to-Source Voltage (Vdss): 1000V
  • Continuous Drain Current (Id): 5A @ 25°C
  • On-State Resistance (Rds On): 2.8Ohm @ 2.5A and 10V
  • Power Dissipation: Up to 250W
  • Product Status: Active
  • Manufacturer: IXYS

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