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Same model may have multiple batches, images only for reference.
IXFB70N60Q2 Real Image
Same model may have multiple batches, images only for reference.

IXFB70N60Q2

Part No IXFB70N60Q2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description HiPerFET Power MOSFET Q-Class
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs 265nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 12000pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 890W (Tc)
Rds On (Maximum) @ Id, Vgs 88 mOhm @ 35A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PLUS264
Package TO-264-3, TO-264AA
Win Source Part Number 1191040-IXFB70N60Q2
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXFB 70N60Q2
Introduction Date March 07, 2003
ECCN EAR99
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian IXFB70N60Q2 CAD Model

Description

The IXFB70N60Q2 is a HiPerFET MOSFET N-Channel transistor with a drain-source voltage of 600V and a continuous drain current of 70A (Tc).

  • Gate Charge (Qg) (Maximum) @ Vgs: 265nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 12000pF @ 25V
  • Technology: MOSFET
  • Package: TO-264-3/TO-264AA
  • Ideal for: Discrete Semiconductor Products
  • Suitable for applications with: a maximum power dissipation of 890W (Tc).

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23+ $13.0965 $301.2195
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